Main public logs

Combined display of all available logs of LabAdviser. You can narrow down the view by selecting a log type, the username (case-sensitive), or the affected page (also case-sensitive).

10:34, 17 January 2011 Ast talk contribs changed group membership for Gs from (none) to danchip
15:42, 12 January 2011 Meno talk contribs changed group membership for CMP from (none) to nanotech
15:24, 6 January 2011 Meno talk contribs changed group membership for KE from (none) to nanotech
12:38, 4 January 2011 Ast talk contribs changed group membership for Jvl from (none) to nanotech
10:18, 21 December 2010 Ast talk contribs changed group membership for Izzet from (none) to nanotech
11:41, 9 December 2010 Ast talk contribs changed group membership for Jehan from industry to danchip
10:49, 9 December 2010 Ast talk contribs changed group membership for Lucap from (none) to nanotech
10:12, 3 December 2010 BGE talk contribs uploaded File:BGE GLass etch Cr50Au400n1 pinholes 05.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken where I found some pinholes.)
10:12, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 pinholes 04.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken where I found some pinholes.)
10:11, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 pinholes 03.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken where I found some pinholes.)
10:11, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 pinholes 02.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken where I found some pinholes.)
10:10, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 pinholes 01.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken where I found some pinholes.)
10:09, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 05.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken a random place on the wafer.)
10:09, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 04.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken a random place on the wafer.)
10:08, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 03.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken a random place on the wafer.)
10:08, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 02.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken a random place on the wafer.)
10:07, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Cr50Au400n1 01.jpg (15min HF 40% etch of borofloat with 50/400 nm Cr/Au mask made in the Alcatel E-beam evaporator. Resist for masking the Cr/Au etch has been left on and baked at 120 degrees of ½ hour. The image is taken a random place on the wafer.)
09:07, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test2 pinholes 4.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering is on and has been heated to 180 degrees before etching in 40% HF for 15 min.)
09:07, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test2 pinholes 3.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering is on and has been heated to 180 degrees before etching in 40% HF for 15 min.)
09:07, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test2 pinholes 2.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering is on and has been heated to 180 degrees before etching in 40% HF for 15 min.)
09:06, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test2 pinholes 1.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering is on and has been heated to 180 degrees before etching in 40% HF for 15 min.)
09:06, 3 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test2 6.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering is on and has been heated to 180 degrees before etching in 40% HF for 15 min.)
17:00, 1 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test1 05.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering has been removed before etching in 40% HF for 15 min.)
17:00, 1 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test1 04.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering has been removed before etching in 40% HF for 15 min.)
16:59, 1 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test1 03.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering has been removed before etching in 40% HF for 15 min.)
16:59, 1 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test1 02.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering has been removed before etching in 40% HF for 15 min.)
16:58, 1 December 2010 BGE talk contribs uploaded File:BGE Glass etch Lesker test1 01.jpg (Borofloat etch with silicon mask made in the Lesker at 200dg. Resist mask from the pattering has been removed before etching in 40% HF for 15 min.)
11:21, 25 November 2010 Ast talk contribs changed group membership for Dok from (none) to nanotech
10:17, 18 November 2010 Tg talk contribs deleted page Process flow approval (content was: '== Process Flow Approval == === Why do process flows need to be reviewed === Before implementing process flows in the DTU Danchip cleanroom facilities, the process needs ...' (and the only contributor was 'Tg'))
17:12, 15 November 2010 BGE talk contribs uploaded File:AOE act neg resist profile.jpg
17:04, 15 November 2010 BGE talk contribs uploaded File:AOE act neg 2 A.jpg
12:23, 3 November 2010 Ast talk contribs changed group membership for Ithy from (none) to nanotech
12:21, 3 November 2010 Ast talk contribs changed group membership for Katk from (none) to nanotech
12:19, 3 November 2010 Ast talk contribs changed group membership for Sitl from (none) to nanotech
12:09, 2 November 2010 Ast talk contribs changed group membership for Lht1 from (none) to industry
10:37, 1 November 2010 Ast talk contribs changed group membership for Marco from (none) to fotonik
14:12, 27 October 2010 Tg talk contribs uploaded File:F 01.jpg (udefra aften)
14:04, 27 October 2010 Tg talk contribs uploaded File:Indefra.jpg (indefra)
13:58, 27 October 2010 Tg talk contribs uploaded File:Folder 003.jpg (renrum udefra)
13:55, 27 October 2010 Tg talk contribs uploaded File:Folder 004.jpg (e-beam)
11:53, 27 October 2010 Ast talk contribs changed group membership for Mij from (none) to nanotech
13:20, 26 October 2010 Ast talk contribs changed group membership for Ami from (none) to industry
09:44, 26 October 2010 Ast talk contribs changed group membership for Morgi from (none) to danchip
09:24, 26 October 2010 Ast talk contribs changed group membership for Rican from (none) to industry
15:35, 25 October 2010 Tg talk contribs deleted page III V wet etches (content was: '==HCl:H3PO4 etch== HCl(37%):H<math>_3</math>PO<math>_4</math>(85%) is a selective, anisotropic and slow etching of InP. Very slow rate in quarternaries. The etch rates dep...' (and the only contributor was 'Tg'))
13:54, 22 October 2010 Tg talk contribs deleted page Specific Process Knowledge/III-V Process/etch/plasys/Specific Process Knowledge/III-V Process/etch/plasys/CHF3 O2 RIE (content was: '== CHF<math>_3</math> / O<math>_2</math> etch== A plasma with a gas mixture of CHF<math>_3</math> and O<math>_2</math> is used to etch SiO<math>_2</math> and Si<math>_3</m...' (and the only contributor was 'Tg'))
12:05, 20 October 2010 Jml talk contribs changed group membership for Tg from danchip and administrator to danchip, administrator and bureaucrat
12:05, 20 October 2010 Jml talk contribs changed group membership for Tg from danchip to danchip and administrator
14:23, 4 October 2010 Ast talk contribs changed group membership for Anl from (none) to nanotech
14:15, 4 October 2010 Ast talk contribs changed group membership for Jka from (none) to nanotech