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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS

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Revision as of 12:16, 23 November 2007 by Rkc (talk | contribs) (New page: TEOS oxide, has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown voltage in the order of 10^6)

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TEOS oxide, has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown voltage in the order of 10^6

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