Specific Process Knowledge/Etch/ICP Metal Etcher

The ICP Metal Etcher

The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the IBE/IBSD Ionfab 300.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

Equipment info in LabManager

Process information

• Etch of aluminium
• Etch of titanium
• Etch of chromium

• Etch of nanostructures in silicon

An overview of the performance of the ICP Metal Etcher and some process related parameters

Purpose	Dry etch of	Metals such as aluminium, chromium and titanium and the related oxides and nitrides Metals such as molybdenum, tungsten, titanium tungsten
Performance	Etch rates	Alumninium : ~350 nm/min (depending on features size and etch load)
	Anisotropy	Good
Process parameter range	Process pressure	~0.1-95 mTorr
	Gas flows	SF6: 0-100 sccm O2: 0-100 sccm C4F8: 0-100 sccm Ar: 0-100 sccm CF4: 0-100 sccm H2: 0-30 sccm CH4: 0-50 sccm BCl3: 0-100 sccm Cl2: 0-100 sccm HBr: 0-100 sccm
Substrates	Batch size	1 6" wafer per run 1 4" wafer per run 1 2" wafer per run Or several smaller pieces on a carrier wafer
	Substrate material allowed	Silicon wafers with layers of silicon oxide or silicon (oxy)nitride Quartz wafers
	Possible masking material	Photoresist/e-beam resist PolySilicon, Silicon oxide or silicon (oxy)nitride Aluminium, titanium or chromium