Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch
End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min. Resist stripping can be hard due to burned resist, to remedy this try to lover the current; this will though chance the sidewall angle. For help, discussion and further info please contact Kristian Hagsted Rasmussen.