Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch

Development of continuous nanoetch

Recipe	nano1.0	nano1.1	nano1.2	nano1.3	nano1.21	nano1.4	nano1.41	nano1.42	nano1.43
C₄F₈ (sccm)	52	52	52	52	75	75	75	75	75
SF₆ (sccm)	38	38	38	38	38	38	38	38	38
O₂ (sccm)	0	0	0	0	0	0	0	0	0
Coil power (W)	800 (F)	600 (F)	800 (F)	600 (F)	800 (F)	800 (F)	800 (F)	800 (F)	800 (F)
Platen power (W)	50	50	50	40	50	50	75	40	30
Pressure (mtorr)	4	4	4	4	4	4	4	4	4
Temperature (degs C)	10	10	-10	-10	-10	-20	-20	-20	-20
Process time (s)	120	120	120	120	120	120	120	120	120
Etch rates (nm/min)
Averages	295	228	299	235	183	183	166	160	148
Std. Dev	36	29	37	20	9	9	9	8	6
Zep etch rate (nm/min)
		172	95	94	69	67	101	65	55
Sidewall angle (degrees)
Averages	93	94	92	94	91	91	90	90	90
Std. Dev	1	1	0	1	0	0	1	0	0
CD loss (nm pr edge)
Averages	-11	-13	-17	-10	-10	-10	-20	-13	-24
Std. Dev	12	10	11	14	15	15	16	15	21
Bowing (nm)
Averages	31	42	13	16	6	6	3	-3	0
Std. Dev	7	6	4	3	2	2	2	3	1
Bottom curvature
Averages	-45	-45	-44	-43	-32	-32	-34	-32	-39
Std. Dev	5	7	4	9	10	10	9	8	9
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On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus. The substrates are 6" wafers with

Recipe	Nanobosch1		Nanobosch2		Nanobosch3		Nanobosch4		Nanobosch5
Cycle	Etch	Dep	Etch	Dep	Etch	Dep	Etch	Dep	Etch	Dep
C₄F₈ (sccm)	50	50
SF₆ (sccm)	50	0
O₂ (sccm)	5	0
Coil power (W)	350	500
Platen power (W)	30	0
Pressure (mtorr)	10	10
Temperature (degs C)	20
Duration (cycles/time)	5
Etch rates (nm/min)
Averages	.	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.	.	.	.
Zep etch rate (nm/min)
Averages	.	.	.	.	.	.	.	.	.
Sidewall angle (degrees)
Averages	.	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.	.	.	.
CD loss (nm pr edge)
Averages	.	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.	.	.	.
Bowing (nm)
Averages	.	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.	.	.	.
Bottom curvature
Averages	.	.	.	.	.	.	.	.	.
Std. Dev	.	.	.	.	.	.	.	.	.
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