Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2

nano1.42 versus pxnano2

Recipe		nano1.42	pxnano2
Tool		Pegasus	ASE
Parameters	Gas	C4F8 75 sccm, SF6 38 sccm	D: C4F8 50 sccm	E: C4F8 50 sccm, SF6 50 sccm
	Power	800 W CP, 40 W PP	D: 500 W CP	E: 350 W CP, 30 W PP
	Pressure	4 mTorr, Strike 3 secs @ 15 mTorr	10 mTorr
	Temperature	-20 degs	20 degrees
	Hardware	100 mm Spacers	?
	Time	120 secs	D: 3 secs, E: 5 secs, total 12 cycles or 96 secs
Conditions	Run ID	2150	wf_2e09b_mar23
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs	none
	Mask	211 nm zep etched down to 80 nm	211 nm zep etched down to 130 nm

• The results
• 
  The 30 nm trenches etched 120 seconds nano1.42
• 
  The 30 nm trenches etched 96 seconds pxnano2
• 
  The 60 nm trenches etched 120 seconds
• 
  The 60 nm trenches etched 96 seconds
• 
  The 90 nm trenches etched 120 seconds
• 
  The 90 nm trenches etched 96 seconds
• 
  The 120 nm trenches etched 120 seconds
• 
  The 120 nm trenches etched 96 seconds
• 
  The 150 nm trenches etched 120 seconds
• 
  The 150 nm trenches etched 96 seconds

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rates	nm/min	149	161	166	169	170	163	9
Sidewall angle	degs	91	91	90	90	90	90	0
CD loss	nm/edge	3	-11	-12	-34	-36	-18	17
CD loss foot	nm/edge	9	1	1	-20	-9	-4	11
Bowing		4	4	2	6	2	4	2
Bottom curvature		-46	-40	-37	-31	-23	-35	9
zep	nm/min						66
Nominal trench line width		30	60	90	120	150	Average	Std. dev.
Etch rates	nm/min	215	232	240	243	244	235	12
Sidewall angle	degs	90	89	89	89	89	89	0
CD loss	nm/edge	1	-10	-11	-33	-33	-17	15
CD loss foot	nm/edge	6	2	1	-19	-6	-3	10
Bowing		4	2	4	3	1	3	1
Bottom curvature		-36	-29	-22	-19	-17	-25	8
zep	nm/min						51