Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2

nano1.42 versus pxnano2

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Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 75 W PP
	Temperature	50 degs
	Hardware	100 mm Spacers
	Time	60, 120 and 180 secs
Conditions	Run ID	452, 453 and 454
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	190 nm zep

• The results
• 
  The 30 nm trenches etched 120 seconds
• 
  The 60 nm trenches etched 120 seconds
• 
  The 90 nm trenches etched 120 seconds
• 
  The 120 nm trenches etched 120 seconds
• 
  The 150 nm trenches etched 120 seconds
• 
  The 30 nm trenches etched 96 seconds
• 
  The 60 nm trenches etched 96 seconds
• 
  The 90 nm trenches etched 96 seconds
• 
  The 120 nm trenches etched 96 seconds
• 
  The 150 nm trenches etched 96 seconds