Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch

From LabAdviser
Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41 nano1.42 nano1.43
C4F8 (sccm) 52 52 52 52 75 75 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0 0 0
Coil power (W) 800 (forward) 600 (forward) 800 (forward) 600 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward)
Platen power (W) 50 50 50 40 50 50 75 40 30
Pressure (mtorr) 4 4 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20 -20 -20
Process time (s) 120 120 120 120 120 120 120 120 120
Etch rates (nm/min)
Averages 295 228 299 235 183 183 166 160 148 0 0 0 0
Std. Dev 36 29 37 20 9 9 9 8 6 0 0 0 0
Sidewall angle (degrees)
Averages 93 94 92 94 91 91 90 90 90 0 0 0 0
Std. Dev 1 1 0 1 0 0 1 0 0 0 0 0 0
CD loss (nm pr edge)
Averages -11 -13 -17 -10 -10 -10 -20 -13 -24 0 0 0 0
Std. Dev 12 10 11 14 15 15 16 15 21 0 0 0 0
Bowing (nm)
Averages 31 42 13 16 6 6 3 -3 0 0 0 0 0
Std. Dev 7 6 4 3 2 2 2 3 1 0 0 0 0
Botton curvature
Averages -45 -45 -44 -43 -32 -32 -34 -32 -39 0 0 0 0
Std. Dev 5 7 4 9 10 10 9 8 9 0 0 0 0
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The nanoetch