Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch

From LabAdviser
Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41 nano1.42 nano1.43
C4F8 (sccm) 52 52 52 52 75 75 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0 0 0
Coil power (W) 800 (forward) 600 (forward) 800 (forward) 600 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward)
Platen power (W) 50 50 50 40 50 50 75 40 30
Pressure (mtorr) 4 4 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20 -20 -20
Process time (s) 120 120 120 120 120 120 120 120 120
Nominal line width Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
Etch rates in zep resist (nm/min)
One point on wafer
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The nanoetch