Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch
Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | nano1.21 | nano1.4 | nano1.41 |
---|---|---|---|---|---|---|---|
C4F8 (sccm) | 52 | 52 | 52 | 52 | 75 | 75 | 75 |
SF6 (sccm) | 38 | 38 | 38 | 38 | 38 | 38 | 38 |
O2 (sccm) | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
Coil power (W) | 800 (forward) | 600 (forward) | 800 (forward) | 600 (forward) | 800 (forward) | 800 (forward) | 800 (forward) |
Platen power (W) | 50 | 50 | 50 | 40 | 50 | 50 | 75 |
Pressure (mtorr) | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
Temperature (degs C) | 10 | 10 | -10 | -10 | -10 | -20 | -20 |
Process time (s) | 120 | 120 | 120 | 120 | 120 | 120 | 120 |
Nominal line width | Etched depths (nm) | ||||||
30 nm | |||||||
60 nm | |||||||
90 nm | |||||||
120 nm | |||||||
150 nm | |||||||
Nominal line width | Etch rates in trenches (nm/min) | ||||||
30 nm | |||||||
60 nm | |||||||
90 nm | |||||||
120 nm | |||||||
150 nm | |||||||
Etch rates in zep resist (nm/min) | |||||||
One point on wafer | |||||||
Images | Images | Images | Images | Images | Images | Images | Images |
The nanoetch