Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617

AR-P 617 is a positive PMMA based E-beam resist from Allresist. Process information provided by Allresist can be found here.

Spin coating

AR-P 617 can be spin coated on LabSpin 2 and 3 using the CSAR/PMMA bowlset. A spin curve for AR-P 617.06 is provided below. Process parameters are:

• Date: January 22nd 2024
• Coater: LabSpin 3
• Substrate: 2" Si
• Acceleration: 1000 RPM/s
• Time: 60 s
• Baking temperature: 200C (setpoint at 222C)
• Baking time: 120 s

AR-P 617.06 spin curve.

Resulting resist thickness can be determined as y = ax^b+c, where y is thickness [nm], x is spin speed [RPM], a = 65274, b = -0.748 and c = 163.1.

Contrast curve

A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 5 to 120 µC/cm². The dose clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are:

• Date: February 5th 2024
• Coater: LabSpin 2
• Substrate: 2" Si
• Acceleration: 1000 RPM/s
• Time: 60 s
• Baking temperature: 200C, 180C and 160C
• Baking time: 120 s
• Exposure: 100 kV (JEOL 9500)
• Development: AR 600-50 for 90 seconds
• Stopper: IPA for 30 seconds + blow dry with nitrogen

AR-P 617.06 contrast curve from three different soft bake temperatures. Fitted lines are for determining contrast.

Based on the fitted lines the contrasts are found to be 3.7, 4.2 and 4.3 for the 200C, 180C and 160 soft bake temperatures, respectively.

Development

AR-P is developed in AR 600-50 and IPA is used to rinse and stop development. As we have no dedicated setup for this it must be done in beakers in the EBL development fumehood in E4.

Typical development time is 60-90 seconds and it is recommended to rinse for 30 seconds in IPA.