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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
Start parameters, variations noted in the gallery headline
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Recipe name: no 10 with lower platen power
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Coil Power [W]
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2500
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Platen Power [W]
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200
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Platen temperature [oC]
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20
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H2 flow [sccm]
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25.6
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C4F8 flow [sccm]
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25.6
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He flow [sccm]
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448.7
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Pressure
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Fully open APC valve (8-9 mTorr)
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Electromagnetic coils (EM) 'outer coil' / 'inner coil'
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'2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN)
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- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
Results
Temporary conclusions on how the process parameters affect the results in this study:
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What process parameters affect the results?
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- Going from full wafer to small piece on Si carrier:
- Seemed to give more sidewall passivation
- Platen power: lowering the platen power gives
- more sidewall passivation
- lower etch rate
- Less trenching
- Removing the H2 gave:
- less sidewall passivation
- Adding O2 gave:
- less sidewall passivation
- Process pressure/total gasflow rate
- Reducing total gasflow rate which reduced the pressur inside the chamber gave:
- less sidewall passivation
- Reduced the CD (Critical Dimensions)
- Coil power: Reducing coil power
- less CD loss
- more sidewall passivation
- Increasing process time:
- less sidewall passivation
- more sidewall bow
- CD loss due to larger mask faceting
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- Sidewall passivation↑
- Sample size↓
- Platen power↓
- Coil power↓
- H2 flow↑
- O2 flow↓
- Total gas flow rate/pressure↑
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- SiO2 etch with Cr mask on full wafer 6 min etch
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
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- SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
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- SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
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- SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W
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