Specific Process Knowledge/Thin film deposition/Deposition of Silicon Carbide

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Revision as of 21:48, 15 December 2022 by Eves (talk | contribs) (Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin film deposition/Deposition of Silicon Carbide click here]''' <br clear="all" /> == Deposition of Sicicon Carbide == Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker): */Deposition of SiC in Sputter-System Les...")
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Deposition of Sicicon Carbide

Sicicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker):

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