Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch
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The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
Parameter | Recipe name: Slow Etch |
---|---|
Coil Power [W] | 350 |
Platen Power [W] | 25 |
Platen temperature [oC] | 20 |
He flow [sccm] | 0 |
CF4 flow [sccm] | 45 |
Pressure [mTorr] | 3 |
Typical results | Test Results |
---|---|
Etch of SRN | ~43nm/min [measured 39-50 nm/min over a 6" wafer] |
Etch rate of Si3N4 | ~49nm/min [4" on carrier] |
Etch rate of Silicon | ~42nm/min [41-43 nm/min over a 6" wafer] |
Etch rate of DUV resist] | ~nm/min
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Profile [o] |