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Deposition of Titanium Nitride
Thin films of Titanium Nitride (TiN) can be deposited by either ALD or reactive sputtering. If sputtering is used, the target is Ti and nitrogen (N2) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below:
Comparison between sputtering and ALD methods for deposition of Titanium Nitride.
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ALD2
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Sputter-System Metal-Nitride (PC3)
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Sputter-System(Lesker)
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| Generel description
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- Reactive sputtering
- Pulsed DC reactive sputtering
- Reactive HIPIMS (high-power impulse magnetron sputtering)
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| Stoichiometry
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| Film Thickness
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- few nm - ? (hundreds of nm)
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| Deposition rate
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- 0.0173 nm/cycle on a flat sample
- 0.0232 nm/cycle on a high aspect ratio structures
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- not known, depends partly if 3" or 4" target is used. Expected to be faster than the old Sputter-System(Lesker)
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- up to 0.0625 nm/s on a flat sample
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| Step coverage
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| Process Temperature
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| Substrate size
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- Several small samples
- 1-5 50 mm wafers
- 1-5 100 mm wafers
- 1-5 150 mm wafer
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- Many small samples
- Up to 10x100 mm or 150 mm wafers
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- Several small samples
- 100 mm wafer
- 150 mm wafer
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| Allowed materials
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- Silicon
- Silicon oxide, silicon nitride
- Quartz/fused silica
- Al, Al2O3
- Ti, TiO2
- Other metals (use dedicated carrier wafer)
- III-V materials (use dedicated carrier wafer)
- Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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- Silicon
- Silicon oxide, silicon nitride
- Quartz/fused silica
- Metals
- III-V materials (use dedicated carrier wafer)
- Almost anything that is not toxic and does not outgas
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- Silicon
- Silicon oxide, silicon nitride
- Quartz/fused silica
- Metals
- III-V materials (use dedicated carrier wafer)
- Almost anything that is not toxic
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