Specific Process Knowledge/Thin film deposition/Deposition of ITO

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Deposition of ITO

ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O2.

Comparison of the methods for deposition of ITO

Sputter-System(Lesker) Sputter-System Metal-Oxide(PC1)
Generel description
  • RF sputtering of an ITO target - reactive sputtering possible
  • RF sputtering of an ITO target - reactive sputtering possible
  • Pulsed DC sputtering of an ITO target - reactive sputtering possible
  • Reactive HIPIMS (high-power impulse magnetron sputtering) of an ITO target
Stoichiometry
  • Not known
  • In:Sn:O ~ 39:3:58 in the acceptance test. Can be tuned by altering deposition conditions.
Film Thickness
  • few nm - ~ 200 nm
  • few nm - ~ 1 μm
Deposition rate
  • 0.5-2 nm/min
Step coverage
  • unknown
  • unknown
Process Temperature
  • Up to 400 °C
  • Up to 600 °C
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • chips
  • 10x 100 mm wafer
  • 10x 150 mm wafer
Allowed materials
  • almost any