Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch

• Recipe no. 10: C06445_02 coil_2500W, platen:300W, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min
• 
  0.4µ/0.2µ
  
• 
  0.5/0.25µ
  Etch depth: 652 nm
  Resist left: 456 nm
• 
  1µ/0.5µ:
  Etch depth: 855 nm
  Resist left: 487 nm
• 
  2µ/1µ:
  Etch depth: 952 nm
  Resist left: 487 nm
• 
  4µ/2µ:
  Etch depth: 1106 nm
  Resist left: 487 nm
• 
  0.8µ/0.2µ
  Etch depth: 867 nm
  Resist left: 426 nm
• 
  1.0µ/0.25µ:
  Etch depth: 893 nm
  Resist left: 460 nm
• 
  4µ/1µ:
  Etch depth: 1033 nm
  Resist left: 473 nm