Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13

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The nano1.3 recipe

Recipe nano1.3
Recipe Gas C4F8 38 sccm, SF6 52 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 600 W CP, 40 W PP
Temperature -10 degs
Hardware 100 mm Spacers
Time 60 secs (a) and 120 secs (b)
Conditions Run ID (a) 1856 and (b) 1856+1857
Conditioning Sequence: Oxygen clean, processes, no oxygen between runs
Mask 211 nm zep etched down 117 nm


After 60 seconds
Nominal trench line width ' 30 60 90 120 150 Avg Std
ER nm/min 241 285 307 325 335 299 37
SA degs 92 92 92 91 91 92 0
base nm/edge -5 -8 -18 -18 -34 -17 11
foot nm/edge -5 -8 -18 -18 -4 -10 7
Bowing 19 11 11 14 10 13 4
Curve -48 -46 -43 -40 -40 -44 4
zep nm/min 95


After 120 seconds
Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
ER nm/min 189 195 229 241 242 219 25
SA degs 95 93 93 93 94 94 1
base nm/edge 0 4 -6 -26 -34 -13 17
foot nm/edge 5 16 6 -12 -7 2 12
Bowing 27 12 30 22 30 24 7
Curve -56 -54 -45 -40 -45 -48 7
zep nm/min 81