Specific Process Knowledge/Thin film deposition/Deposition of Alumina

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Deposition of aluminium oxide

Aluminium oxide (Alumina, Al₂O₃ ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.

Comparison of the methods for deposition of Alumium Oxide

	Sputter System Lesker	ALD Picosun 200
Generel description	RF sputtering from Al₂O₃ target Reactive Sputtering (never tested)	ALD (atomic layer deposition) of Al₂O₃
Stoichiometry	Not tested	Al₂O₃, very good
Film Thickness	0nm - 200nm	0nm - 100nm
Deposition rate	0,3nm/min	0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
Step coverage	unknown	Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature	Up to 450^oC	150^oC - 350^oC:
More info on Al₂O₃		Al₂O₃ deposition using ALD
Substrate size	chips 1x 100 mm wafer 1x 150 mm wafer	1-5 100 mm wafers 1-5 150 mm wafers Several smaller samples
Allowed materials	almost any	Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al₂O₃ Ti, TiO₂ Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)