Specific Process Knowledge/Characterization/XPS

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The XPS tools at DTU Nanolab

The K-Alpha from 2007 is one of the first instruments of this type that was produced.

The Nexsa from 2019 is on the surface very similar to the K-Alpha. It's panels, however, hide a whole range of supplementary techniques.

In the basement under the cleanroom two X-ray Photoelectron Spectroscopy (XPS) systems are installed back-to-back in the center of room 904. They are both manufactured by Thermofisher and they enable the users to perform elemental and chemical analysis of samples. The XPS K-Alpha is a base technique instrument providing XPS analysis. The XPS Nexsa is an upgraded version with all options.

• The XPS K-Alpha page
• The XPS Nexsa page

Elemental analysis

The XPS instrument enables elemental analysis, chemical state analysis on the sample surface or deeper down by a depth profiling. A comparison about techniques and instruments used for elemental analysis at DTU Nanolab can be found on the page Element analysis.

More about the different possibilities of the XPS instrument is found here:

• The XPS technique
• Elemental analysis
• Depth profiling
• Carbon contamination

• Links to external material

Getting access to the XPS tools

Click HERE to see information on how to get access to the XPS.

Analyzing XPS spectra

The analysis of XPS spectra is an art in itself. Click on the link below to find a some examples in which the Avantage software package has been used to extract information from experiments.

• Processing XPS data

Techniques and option on the XPS tools

Equipment		K-Alpha	Nexsa
Purpose	Main	XPS analysis using monochromated Al-Kα radiation at 1486.6 eV	XPS analysis using monochromated Al-Kα radiation at 1486.6 eV
	Alternative/complementary		Workfunction measurements Ultraviolet Photoelectron Spectroscopy (UPS) with He I and He II UV source Ion Scattering Spectroscopy (ISS) Reflected Electron Energy Loss Spectroscopy Angular Resolved Ultraviolet Photoelectron Spectroscopy (ARUPS)
Performance	Spot size	XPS: 30µm - 400µm	XPS: 10µm - 400µm Raman: > 15 µm
	Pass energy	10-400 eV|style="background:WhiteSmoke; color:black"|10-400 eV (XPS and ISS)
	Analysis modes	Scanned and snapshot	Scanned, snapshot and SnapMap
	Charge compensation	Flood gun can be used for charge compensation of non conductive samples
	Finding structures	Choose measuring spot from camera image (magnified)
	Depth profiling	Purpose	With ion beam etch the top layer of the material can be removed, to do a depth profiling
Ion beam size		About 3x1 mm
Substrates	Substrate size	Maximum 60x60 mm
	Substrate thickness	Maximum height about 20 mm