Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride

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Deposition of Titanium nitride

Thin films of titanium nitride can only be deposited in the ALD2 at the moment. More information about the process can be found here.

Only method at the moment for the deposition of titanium nitride

ALD2
Generel description
  • Atomic Layer Deposition
Stoichiometry
  • TiN
Film Thickness
  • 0nm - 50nm
Deposition rate
  • 0.0173 nm/cycle on a flat sample
  • 0.0232 nm/cycle on a high aspect ratio structures
Step coverage
  • Very good
Process Temperature
  • 450oC
Substrate size
  • Several small samples
  • 1-5 50 mm wafers
  • 1-5 100 mm wafers
  • 1-5 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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