Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride

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Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.

Parameter A slow etch with carrier
Coil Power [W] 200
Platen Power [W] 25
Platen temperature [oC] 0
CF4 flow [sccm] 20
H2 flow [sccm] 10
Pressure [mTorr] 3


Results Test on wafer with 20% load, by Izzet Yildiz @Nanotech Test by BGHE @danchip
Etch rate of LPCVD nitride 60-65 nm/min (20% etch load) (Feb. 2014)  
Selectivity to resist [SiN : AZ resist] 1:0.75  
Wafer uniformity (100mm) ?  
Profile [o] ?  
Wafer uniformity map (click on the image to view a larger image) not measured  
SEM profile images Not measured  
Etch rate in Barc   ~50 nm/min (Date: 2014-09-09)
Etch rate in KRF resist   ~40 nm/min (Date: 2014-09-09)