Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride
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Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.
Parameter | A slow etch with carrier |
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Coil Power [W] | 200 |
Platen Power [W] | 25 |
Platen temperature [oC] | 0 |
CF4 flow [sccm] | 20 |
H2 flow [sccm] | 10 |
Pressure [mTorr] | 3 |
Results | Test on wafer with 20% load, by Izzet Yildiz @Nanotech | Test by BGHE @danchip |
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Etch rate of LPCVD nitride | 60-65 nm/min (20% etch load) (Feb. 2014) | |
Selectivity to resist [SiN : AZ resist] | 1:0.75 | |
Wafer uniformity (100mm) | ? | |
Profile [o] | ? | |
Wafer uniformity map (click on the image to view a larger image) | not measured | |
SEM profile images | Not measured | |
Etch rate in Barc | ~50 nm/min (Date: 2014-09-09) | |
Etch rate in KRF resist | ~40 nm/min (Date: 2014-09-09) |