Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride
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Deposition of Aluminium Nitride
AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition. AlN film can be deposited by using the Lesker Sputter System or the ALD2.
Comparison of the methods for deposition of Silicon Oxide
Sputter System Lesker | ![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2] | |
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Generel description |
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Stoichiometry |
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AlN |
Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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Further process information can be found here:
- AlN deposition using ALD2
- For AlN deposition using the Lesker please contact the Thinfilm group.