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GaN etching
| Recipe
|
GaN Etch
|
GaN Etch for Si check
|
| Cl2 flow
|
30 sccm
|
27 sccm
|
| Ar flow
|
10 sccm
|
3 sccm
|
| BCl3 flow
|
0 sccm
|
3 sccm
|
| Platen power
|
200 W
|
75 W
|
| Coil power
|
600 W
|
400 W
|
| Pressure
|
2 mTorr
|
4 mTorr
|
| Platen chiller temperature
|
20 oC
|
20 oC
|
| Results (GaN Etch)
|
| GaN etch rate
|
550-580 nm/min
|
| SiO2 etch rate
|
110-120 nm/min
|
| Sidewall angle
|
~ 90 o
|
| Results (GaN Etch for Si check)
|
| Si etch rate
|
~200 nm/min (bghe 2017-01-17) full 4" wafer
|
 Result of GaN etching. Oleksii Kopylov, DTU Photonics, 2011.
|
