Specific Process Knowledge/Etch/III-V ICP/GaAs-AlGaAs

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GaAs/AlGaAs etching

Recipe GaAs Etch
Cl2 flow 4 sccm
Ar flow 12 sccm
Platen power 80 W
Coil power 700 W
Pressure 6 mTorr
Platen chiller temperature 20 oC


Results (GaAs Etch)
GaAs etch rate >500 nm/min
Sidewall angle ~ 85-90 o
Selectivity (GaAs:Si3N4, GaAs:AlInP) 10:1, 5:1


Recipe GaAs_AlGaAs Etch
Cl2 flow 20 sccm
N2 flow 50 sccm
Platen power 100 W
Coil power 600 W
Pressure 2 mTorr
Platen chiller temperature 20 oC


Results (GaAs_AlGaAs Etch)
AlGaAs etch rate >1000 nm/min
Sidewall angle ~ 90 o
Selectivity (GaAs:SiO2) 30:1


Recipe GaAs_AlGaAs Etch_BCl3
Cl2 flow 10 sccm
BCl3 flow 10 sccm
Ar flow 10 sccm
N2 flow 4 sccm
Platen power 50 W
Coil power 500 W
Pressure 1 mTorr
Platen chiller temperature 20 oC


Results (GaAs_AlGaAs Etch_BCl3)
GaAs etch rate >750 nm/min
Sidewall angle 85-90 o
Selectivity (GaAs:Si3N4, GaAs:AlInP) 10:1
Result of GaAs etching with BCl3. Qijiang Ran, DTU Photonics, 2011.
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