Specific Process Knowledge/Etch/DRIE-Pegasus/ProcessA/PrA-1

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Process runs
Date Substrate Information Process Information SEM Images
Wafer info Exposed area Conditioning Recipe Wafer ID
2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-1, 80 cycles or 14:40 minutes C03991.02


2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-1, 80 cycles or 14:40 minutes C03991.05


3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-1, 80 cycles or 14:40 minutes C04047.02
3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-1, 80 cycles or 14:40 minutes C04047.05
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