Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al₂O₃

Recipe: Al2O3 LT

Temperature: 80-150 ^oC

	TMA	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.2 s
Purge time	5.0 s	10.0 s

Deposition rate: 0.089 nm/cycle (@120 ^oC)

Al2O3 deposition at 100 oC and 150 oC

Deposition conditions at 100 oC Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm 150 14.11 2.18 0.225 1.56 300 25.94 0.68 0.14 1.59 500 41.35 1.87 0.60 1.59 800 65.05 2.28 1.13 1.59 1088 87.25 2.15 1.35 1.60 Deposition conditions at 150 oC Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm 150 15.38 1.72 0.18 1.61 300 28.67 1.73 0.36 1.62 500 46.93 1.75 0.57 1.62 800 73.46 1.75 0.92 1.63 1088 99.50 1.74 1.20 1.63

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Low temperature deposition of TiO₂

Recipe: TiO2 LT

Temperature: 80-150 ^oC

	TiCl4	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.2 s	0.2 s
Purge time	10.0 s	15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 ^oC)

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 ^oC

Al₂O₃/TiO₂ multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 ^oC

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  Al₂O₃/TiO₂ multilayers grown on silicon trenches.

Evgeniy Shkondin, DTU Danchip, 2014-2016.