Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE

From LabAdviser

I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.

C4F8

CF4

Parameter s006687 s006701 s007258 s007350 s007352
Mask material 750nm KRF 750nm KRF 750nm KRF 750 nm KRF 750nm KRF
Barc etch none none none none none
Coil power 800W 800W 800w 800w 800w
Platen power 100W 100W 100w 60W 30w
Pressure 4mTorr 4mTorr 4mTorr 4mTorr 4mTorr
Flow rate CF4 20sccm 25sccm 30sccm 30sccm 30sccm
Flow rate H2 20sccm 15sccm 10sccm 10sccm 10sccm
T 0 0 0 0 0
Process time 10min 10min 2min30 2min30 3min30
Comment Little resist left, Trenching A little trenching very little trenching in large lines - anti trenching in small lines
Results
profile near edge
Profile near middel
tilted
profile
s007350 2µm pitch
s007350 2µm pitch
s007350 1µm pitch
s007352 1µm pitch
s007352 2µm pitch
Etch depth in SiO2 374nm 505nm 578nm 336nm 235nm
Etch rate 37.4nm/min 50.5nm/min 134.4nm/min 88nm/min
Etch depth in resist 345nm 633nm 700nm 405nm 308nm
Selectivity (resist:SiO2) 1:1.1 1:0.80 1:0.83 1:0.83 1:0.76