Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong

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With C4F8 and H2 chemistry

Part 1

Very good

Very good

Very good

Very good

Very good

Very good

Unstable plasma at 2mtorr

stable plasma at 2.5mtorr

stable plasma at 2.5mtorr

ICP metal etch SiO2 by reist mask try

Date

Feb262013

Feb272013

Feb272013 20:00

Feb272013 23:00

Feb282013 1am

Feb282013 2am

Feb282013 2am

Feb282013 2am

Feb2820134am

Metal ICP  recipe

pxSiO2try5

pxSiO2try6

pxSiO2try7

pxSiO2try8

pxSiO2try8

pxSiO2try8

pxSiO2try9

pxSiO2try9

pxSiO2try9

Wafer size and ID

6inch,

6A1_feb252013

6inch,

6A4_feb262013

6inch,

6A6_feb262013

6inch,

6A2_feb272013

6inch,

6A3_feb272013

6inch,

6A4_feb272013

6inch,

6A5_feb272013

6inch,

6A5_feb272013

6inch,

6A6_feb272013

Mask

440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma

440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma

780nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma

780nm resist on 62nmBarc on 800nm apox, first etch barc 20sec by Ox plasma

780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma

Blank Si

780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma

780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma

780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma

Etch time

2min

4min

4min

4min

5min

4min

1min

4min

5min

Pressure [mTorr]

6

6

4

3

3

2

2

2.5

2.5

C4F8 flow [sccm]

0

20

10

8

8

8

8

8

8

CF4 flow [sccm]

40

0

0

0

0

0

0

0

0

H2 flow [sccm]

30

20

30

30

30

30

30

30

30

CH4 flow [sccm]

0

Set 20 real 3.7

Set 20 real 3.7

0

0

0

0

0

0

Coil Power [W]

800

800

800

800

800

800

800

800 reflect 13W

800 reflect 8W

Platen Power [W]

100

100

120

150

150

150

150

150

150reflect 0.2w

Platen temperature [oC]

20

20

20

20

20

20

20

20

20

Coil match

60%,27%

63%,25%

63%,25%

67%,24%

67%,24%

68.9%,24.1%

68.9%,24.1%

68.7%,25.3%

68.87%,23.1%

Platen Match

40%,53%

36%,54%

36%,54%

34%,54%

34%,54%

34.3%,53.8%

34.3%,53.8%

36.8%,54.9%

33.0%,54.4%

Throde valve opening rate

17%

12%

14%

14.7%

14.7%

14.7%

14.7%

16.2%

Images

Image1

Images2

Images3

Images4

Iamges5

Images6

Images7

Images8

Comments

Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm

Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm

Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm

Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm, side wall 85degree

Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm

Plasma very stable on blank Si wafer

Plasma not stable in apox wafer

etched 500nm apox, resit 150n, slide wall  86degm

 

Part2

ICP metal etch SiO2 by reist mask try

stable plasma at 2.5mtorr

stable plasma at 2.5mtorr

Date

Feb28204am

March012013, 21

Metal ICP  recipe

pxSiO2try9

pxSiO2try9

Wafer size and ID

6inch,

6A6_feb272013

6inch,

6A1_march012013

Mask

780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma

780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma

Etch time

5min

65min

Pressure [mTorr]

2.5

2.5

C4F8 flow [sccm]

8

8

CF4 flow [sccm]

0

0

H2 flow [sccm]

30

30

CH4 flow [sccm]

0

0

Coil Power [W]

800 reflect 8W

800 reflect 8W

Platen Power [W]

150reflect 0.2w

150reflect 0.2w

Platen temperature [oC]

20

20

Coil match

68.87%,23.1%

68.87%,23.1%

Platen Match

33.0%,54.4%

33.0%,54.4%

Throde valve opening rate

10.8% to 11.7%, pressure 2.11 to 2.40, not stable

Comments

SiO2 width 230nm

 

With CF4 and H2 chemistry

Part 1

bad

bad

bad

bad

bad

Date

Feb122013

Feb122013

Feb122013

Feb122013

Feb122013

Metal ICP  recipe

pxSiO2try1

pxSiO2try1

pxSiO2try1

pxSiO2try2

pxSiO2try2

Wafer size and ID

6inch

6A

6inch

6A1_feb112013

6inch,

6A2_feb112013

6inch,

6A3_feb112013

6inch,

6A4_feb112013

Mask

Blank Si dummy test

Blank apox, 3539nm

Blank KRF 347.9nm

Blank KRF 345nm

Blank  apox 4623m

Etch time

2min

2min

1min

1min

1min

Pressure [mTorr]

8

8

8

20

20

C4F8 flow [sccm]

20

20

20

20

CF4 flow [sccm]

40

40

40

40

40

H2 flow [sccm]

20

20

20

20

20

Coil Power [W]

800

800

800

800

800

Platen Power [W]

200

200

200

200

200

Platen temperature [oC]

20

20

20

20

20

Coil match

59%, 27%

59%, 27%

59%, 27%

48%, 29%

48%, 29%

Platen Match

45%, 56%

45%, 56%

45%, 56%

52%, 60%

52%, 60%

Throde valve opening rate

16%

16%

16%

10.7%

10.7%

Etch rate

µm/min

Wf center  238µm/min

Wafer  edge  230nm/min

Wafer center 170.5nm/min

1cm from wf edge , 204.1nm/min

Wf center  80.4µm/min

Wafer  edge  119.6nm/min

Wafer center 128.26nm/min, 1cm from wafer  edge 123.09nm/min

Distance from wf cent (mm)

Seletivity at cent

Remaining APOX thickness nm

Wf center 3062nm

1cm from wf edge: 3079nm

Wf center nm

Too much polymer in sem

Comments

 

Part 2

bad

bad

bad

Very good

ICP metal etch SiO2 by reist mask try

Date

Feb252013

Feb252013

Feb262013

Metal ICP  recipe

pxSiO2try3

pxSiO2try4

pxSiO2try5

Wafer size and ID

6inch,

6A1_feb252013

6inch,

6A6_feb252013

6inch,

6A1_feb252013

Mask

980nm resist resist on 62nmBarc on 1190nm apox

780nm resist on 62nmBarc on 492nm apox, first etch barc 20sec by Ox plasma

440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma

Etch time

3min

3min

2min

Pressure [mTorr]

15

8

6

C4F8 flow [sccm]

0

0

0

CF4 flow [sccm]

40

40

40

H2 flow [sccm]

30

30

30

Coil Power [W]

800

800

800

Platen Power [W]

200

200

100

Platen temperature [oC]

20

20

20

Coil match

50%, 30%

59%, 27%

60%,27%

Platen Match

50%, 57%

44%, 56%

40%,53%

Throde valve opening rate

10%

13.6%

17%

Images

Images 2

Images

Comments

Apox etch 550nm for 3min, side wall angle 71degree

Too much polymer, etch Si too much

Etch through 500nm apox, then etch Si 180nm,

Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm

Low pressure gives better profile, less polymer, however, CF4 etch Si too quick