Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong
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Date |
Feb122013 |
Feb122013 |
Feb122013 |
Feb122013 |
Feb122013 |
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Metal ICP recipe |
pxSiO2try1 |
pxSiO2try1 |
pxSiO2try1 |
pxSiO2try2 |
pxSiO2try2 |
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Wafer size and ID |
6inch 6A |
6inch 6A1_feb112013 |
6inch, 6A2_feb112013 |
6inch, 6A3_feb112013 |
6inch, 6A4_feb112013 |
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Mask |
Blank Si dummy test |
Blank apox, 3539nm |
Blank KRF 347.9nm |
Blank KRF 345nm |
Blank apox 4623m |
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Etch time |
2min |
2min |
1min |
1min |
1min |
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Pressure [mTorr] |
8 |
8 |
8 |
20 |
20 |
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C4F8 flow [sccm] |
20 |
20 |
20 |
20 |
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CF4 flow [sccm] |
40 |
40 |
40 |
40 |
40 |
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H2 flow [sccm] |
20 |
20 |
20 |
20 |
20 |
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Coil Power [W] |
800 |
800 |
800 |
800 |
800 |
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Platen Power [W] |
200 |
200 |
200 |
200 |
200 |
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Platen temperature [oC] |
20 |
20 |
20 |
20 |
20 |
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Coil match |
59%, 27% |
59%, 27% |
59%, 27% |
48%, 29% |
48%, 29% |
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Platen Match |
45%, 56% |
45%, 56% |
45%, 56% |
52%, 60% |
52%, 60% |
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Throde valve opening rate |
16% |
16% |
16% |
10.7% |
10.7% |
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Etch rate |
µm/min |
Wf center 238µm/min Wafer edge 230nm/min |
Wafer center 170.5nm/min 1cm from wf edge , 204.1nm/min |
Wf center 80.4µm/min Wafer edge 119.6nm/min |
Wafer center 128.26nm/min, 1cm from wafer edge 123.09nm/min |
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Distance from wf cent (mm) |
Seletivity at cent |
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Remaining APOX thickness nm |
Wf center 3062nm 1cm from wf edge: 3079nm |
Wf center nm |
Too much polymer in sem |
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Comments |