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SEM LEO

The SEM LEO is a scanning electron microscope. It is a very reliable and rugged instrument that provides high quality SEM images of most samples, and it has excellently served the users of the cleanroom for many years. Excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers may be acquired on the SEM.

However, the SEM LEO has now been equipped with a Raith e-beam lithography system, and from the turn of the year 2015-2016 it is exclusively dedicated to the users of the Raith E-beam lithography, so system so general imaging of user samples is no longer allowed.

The SEM LEO was installed in the cleanroom in the 1998, and the software was ungraded in 2012.

The user manual, control instruction, the user APV and contact information can be found in LabManager:

SEM LEO info page in LabManager,

Performance information

SEM comparison page

Raith Elphy e-beam lithography system

Equipment performance and process related parameters

Equipment		SEM LEO (Leo 1550 SEM)
Purpose	Imaging and measurement of	Any (semi)conducting sample that may have thin (> ~ 5 µm) layers of non-conducting materials on top
Purpose	Other purpose	E-beam lithography using Raith Elphy Quantum system
Location		Cleanroom of DTU Danchip
Performance	Resolution	~ 5 nm (limited by vibrations) The resolution is strongly dependent on the type of sample and the skills of the operator.
Instrument specifics	Detectors	Secondary electron (Se2) Inlens secondary electron (Inlens) Backscatter electron (BSD)
	Stage	X, Y: 125 × 100 mm T: 0 to 90^o R: 360^o Z: 48 mm
	Electron source	FEG (Field Emission Gun) source
	Operating pressures	Fixed at High vacuum (2 × 10^-5mbar - 10^-6mbar)
	Options	Raith Elphy Quantum E-Beam Litography system
Substrates	Batch size	1 100 mm wafer 1 150 mm wafer (not full view) Smaller samples
	Allowed materials	Any standard cleanroom materials.