Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride

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Deposition of Aluminium Nitride

AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the Cryofox PVD co-sputter/evaporation or the Lesker Sputter System.



Only one method at the moment

Cryofox PVD co-sputter/evaporation Sputter System Lesker
Generel description
  • Reactive Sputtering ( 6" Al target) or AlN target sputtering
  • Reactive Sputtering
Stoichiometry
  • Depend on the target power
  • Not tested
Film Thickness
  • 0nm - 200nm
  • 0nm - 200nm
Deposition rate
  • Not tested
  • Not tested
Step coverage
  • Very good
  • Very good
Process Temperature
  • Up to 400oC
  • Up to 450oC
Substrate size
  • 100 mm wafers (Up to 12 wafers at a time)
  • 150 mm wafers (Up to 4 wafers at a time)
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Any metals
  • almost any