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Deposition of aluminium oxide

Aluminium oxide (Alumina, Al₂O₃ ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System or the Cryofox PVD co-sputter/evaporation. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample

Comparison of the methods for deposition of Alumium Oxide

	Sputter System Lesker	Cryofox PVD co-sputter/evaporation	ALD Picosun 200
Generel description			ALD (atomic layer deposition) of Al₂O₃
Stoichiometry			Al₂O₃, very good
Film Thickness			0nm - 100nm
Deposition rate			0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
Step coverage			Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature			150^oC - 350^oC:
More info on Al₂O₃			Al₂O₃ deposition using ALD
Substrate size			1-5 100 mm wafers 1-5 150 mm wafers Several smaller samples
Allowed materials			Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al₂O₃ Ti, TiO₂ Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)