Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation

From LabAdviser

Introduction

An e-beam exposure requires a v30-file, which contains information on the pattern to write, a jobdeck file (jdf-file), and a schedule file (sdf-file). The sdf- and jdf-file contain information about size and position of substrate, dose, current, and shot step. The sdf-file, jdf-file and v30-file are compiled to a magazine-file (mgn) on the 9500 computer.


When a magazine-file is prepared, the actual shot time can be estimated by the e-beam computer (9500).



Preparing a GDS file

If the layout is asymmetric, the conversion might result in an offset of the final layout onto the wafer. It is therefore recommended to symmetrise the layout, e.g. by inserting small structures in the corners of a rectangle that covers the layout.


How to convert to GDS in L-edit:

1 In L-edit, click File/Export Mask Data/GDSII

2 Choose Default GDSII unit: 1 database unit = 0.001 microns


Even though you do not export hidden layers or un-selected cells, unwanted layers might appear in the final GDSII file. Therefore, after conversion til GDSII, check your layout in a different layout viewer, e.g. CleWin (freeware), or BEAMER.

Converting from GDS to v30 (BEAMER)

Please read the special BEAMER manual for a more advanced description of the BEAMER program.


The gds-file is transferred to the folder 'C:\1 gds files\name\date’ on DCH1350. If your v30-file is heavy, you can use DCH1352 instead; this computer is reached via DCH1350 by a remote desktop connection. On DCH1352, put the gds-file in the folder ‘D:\1 gds files\name\date’.


This computer also has L-edit installed if last-minute changes to the pattern are needed. The gds-file should then be converted to a v30-file by using the programme BEAMER. There is an elaborated BEAMER software manual available from LabManager (under Technical Documents).


   Open BEAMER.
   Drag the ‘Import’-module to the top-right window of Layout Beamer, open the gds-file to convert
   If the pattern has abutting polygons and even overlapping polygons which lead to double exposure, incorrect simulations etc., this can be fixed by running a ‘Heal’ program; drag the ‘HEAL’-module on top of the gds-file
   Drag the ‘Export’-module on top of the gds-file, export to the location ‘C:\1 gds files\name\date’. Export in JEOL52-format and change field-size to 1000µm x 1000 µm (under ‘Advanced’). Click RUN on the Export-icon to run the whole procedure


The gds-file is now converted to v30-format. In order to check the layout pattern


Double-click on the v30-module and and a VIEW LAYOUT window will open.

Preparing sdf and jdf files

Sdf- and jdf-files should not be created or edited in a regular notepad or wordpad program. Use only SuperEdi, which is freeware and available on the DCH1350 and DCH1352 computers. When you save a sdf- or jdf-file in SuperEdi, make sure to set the line endings to UNIX.

Both the sdf- and jdf-file should carry names using no capital letters.


You can find templates of sdf- and jdf-files in the folder home/eb0/jeoleb/job/templates on the 9500 computer.


The sdf-file

The sdf-file contains a series of commands and parameters that specifies jdf filename, type

of cassette, shot pitch and condition file. It also specifies whether the pattern to be exposed

requires alignment.


Below, an explanation of the template 'simple.sdf'. Note that semicolon

outcomments the text: ___________________________________________________________________________ MAGAZIN 'SIMPLE1' The magazine name is SIMPLE1; max. 20 capital letters

  1. 6 Cassette from slot no. 6 is used

%4A Wafer of 4" in position A is exposed JDF 'simple',1 Layer block no. 1 of the jdf-file 'simple.jdf' is exposed ACC 100 Acceleration voltage of 100keV is used CALPRM '0.2na_ap5' The condition file 0.2na_ap5 is used DEFMODE 2 Both deflectors are used (default) RESIST 240 A dose of 240 µC/cm2 is used SHOT A,8 The shot step between individual beam shots is 4 nm OFFSET(0,0) An offset of 0 µm is applied in both X and Y

END After exposure, the stage is left empty, i.e. the cassette is unloaded

___________________________________________________________________________

Note that the unit in the SHOT command is in 0.5nm, i.e. 'SHOT A,16' gives a shot pitch

of 8nm. If the next user of the machine has loaded a cassette in slot #10 and you wish to load that

cassette after exposure, you can finalize the sdf-file with 'END 10'.



The jdf-file

The jdf-file contains a series of commands and parameters that specifies what pattern (v30-file) is to be written where on the sample. It also specifies what calibrations are to be performed during writing.


The jdf-file 'simple.jdf' could look like this:

___________________________________________________________________________ JOB/W 'SIMPLE',4 4" wafer, jobname is 'SIMPLE', max. 20 capital letters

PATH DRF5M The DRF5M calibration is used (see section 3.3)

   ARRAY   (0,3,2000)/(0,3,3000)   see note 1
       ASSIGN  P(1) -> (*,1)                Pattern 1 is assigned to row 1-3 coloumn 1
       ASSIGN  P(2) -> (*,2-3)            Pattern 2 is assigned to row 1-3 coloumn 2-3  
       SKIP (1,1)                                     Nothing is assigned to chip (1,1)
   AEND                                                  End-command to 'ARRAY'

PEND End-command to 'PATH'

LAYER 1 Start of layer block 1 P(1) 'template1.v30' Pattern 1 defined in 'template1.v30' P(2) 'template2.v30' Pattern 2 defined in 'template2.v30' SPPRM 4.0,,,,1.0,1 Beam parameters (default - see section 6.2) STDCUR 0.22 ;nA Beam current (in nA) used for writing, see note 2

END End of jdf-file ___________________________________________________________________________ Note 1: 9 chips are written, the upper left chip has center in (X,Y) = (0,0). The pitch

between the chips is 2 mm in x-direction and 3 mm in y-direction.

Note 2: You should always add 10% to the current defined in 'STDCUR'; this ensures you

work well below a scan speed of 100 MHz and thus gives room for a fluctuating current.

___________________________________________________________________________

Example 2.1: Two 2” wafers are loaded in position 2A and 2B with separate JDF-files

('thomasjfeb242010’ and ‘jonaspfeb242010’ respectively). The 2" cassette is located in slot

no. 3 in the autoloader. After exposure, the cassette will be unloaded to slot no. 3 again.

___________________________________________________________________________

MAGAZIN 'PLAIN'


---------------------------
WAFER #2A FOR THOMAS
---------------------------
  1. 3

%2A

JDF 'thomasjfeb242010',1

ACC 100

CALPRM '0.2na_ap5'

DEFMODE 2 ;2_stage deflection

RESIST 320

SHOT A,12

OFFSET(0,0)

---------------------------
WAFER #2B FOR JONAS
---------------------------
  1. 3

%2B

JDF 'jonaspfeb242010',1

ACC 100

CALPRM '0.2na_ap5'

DEFMODE 2 ;2_stage deflection

RESIST 250

SHOT A,8

OFFSET(0,0)

---------------------------

END

______________________________________________________________________________

Example 2.2: An array of 20 chips is written on one 4" wafer. The first 10 coloums of the array is defined in layer block no. 1 of the jdf, coloumn 11-20 is defined in layer block no. 2 of the jdf. The two layer blocks uses different beam shot pitch and base dose. The two layer blocks must be called in two different sequences in the sdf-file.

______________________________________________________________________________


MAGAZIN 'LAYERS'

---------------------------------------
THIS IS FOR WAFER #1 %4A
---------------------------------------
  1. 1

%4A JDF 'layers',1 ACC 100 CALPRM '0.2na_ap5' DEFMODE 2 ;2_stage deflection OFFSET(0,0)

---------------------------------------
  1. 1

%4A JDF 'layers',2 ACC 100 CALPRM '0.2na_ap5' DEFMODE 2 ;2_stage deflection OFFSET(0,0)

---------------------------------------

END 1

_______________________________________________________________________________


JOB/W 'TWOLAYERS',4 PATH DRF5M

ARRAY   (-10000,20,2000)/( 10000,20,2000) 
 ASSIGN  P(1) -> (1-10,*)
 ASSIGN  P(2) -> (11-20,*)
AEND

PEND


LAYER 1 P( 1 ) 'test2.v30' SPPRM 4.0,,,,1.0,1 SHOT A,20 RESIST 220 STDCUR 0.22 ;nA


LAYER 2 P( 2 ) 'test2.v30' SPPRM 4.0,,,,1.0,1 SHOT A,40 RESIST 250 STDCUR 0.22 ;nA

END