Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan37

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Nominal trench line width ' ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 59 67 67 67 68 66 4
Sidewall angle degs 84 86 84 86 86 85 1
CD loss nm/edge -16 -31 -29 -36 -33 -29 8
CD loss foot nm/edge -16 -23 -14 -18 -12 -17 4
Bowing 7 23 15 10 9 13 7
Bottom curvature -27 -8 11 9 4 -2 15
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