Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings

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Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
22-7-2014 1.573 (wafer center)
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for Crystal thickness monitor 2
  1 2 3 4 5
A A1 A2 A3 A4 A5
B B1 B2 B3 B4 B5
C C1 C2 C3 C4 C5
D D1 D2 D3 D4 D5