Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly1

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Process runs
Date Substrate Information Process Information SEM Images
Wafer info Mask Material/ Exposed area Tool / Operator Conditioning Recipe Wafer ID Comments
20/11-2014 6" Wafer with 210 nm oxide and 1800 nm polysilicon standard stepper mask (50 nm barc + 320 nm krf) Si / 50+ % Pegasus/jmli 10 minute TDESC clean + 45 sec barc etch danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes S004675