Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv

**Process runs**
Date	Substrate Information				Process Information				SEM Images
Date	Wafer info	Mask	Material/ Exposed area	Tool / Operator	Conditioning	Recipe	Wafer ID	Comments	SEM Images
20/11-2014	6" Wafer with 210 nm oxide and 1800 nm polysilicon	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50+ %	Pegasus/jmli	10 minute TDESC clean + 45 sec barc etch	danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes	S004675
20/11-2014	6" Wafer with 210 nm oxide and 1800 nm polysilicon	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50+ %	Pegasus/jmli	10 minute TDESC clean + 45 sec barc etch	danchip/showerhead/polySi etch DUV mask, 20 cycles or 3:02 minutes	S004675