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Eutectic bonding
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Fusion bonding
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Anodic bonding
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| General description
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For bonding two substrates by use of an interphase that makes an eutecticum.
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For bonding two identical materials.
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For bonding Si and Glass.
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| Bonding temperature
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Depending on the eutecticum 310°C to 400°C.
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Depending on defects 50°C to 400°C.
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Depending on the voltage 300°C to 500°C Standard is 400°C.
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| Annealing temperature
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No annealing
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1000°C in the bond furnace C3.
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No annealing
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| Materials possible to bond
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Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni
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Si/Si, SiO2/SiO2
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Si/Pyrex (glass)
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| Substrate size
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Up to 6" (aligning only possible for 4" and 6")
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Up to 6" (aligning only possible for 4" and 6")
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Up to 6" (aligning only possible for 4" and 6")
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| Cleaning
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Cleaning by N2.
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Wet chemical cleaning, IMEC.
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Cleaning by N2.
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| IR alignment
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Double side polished wafers.
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Double side polished wafers.
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Not relevant.
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