Specific Process Knowledge/Thermal Process/BCB Curing Oven

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BCB Curing Oven

The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of metals in a nitrogen atmosphere.

During processing the furnace is rapidly heated by use of eight halogen lamps situated below the sample. The furnace is purged with a high or a low nitrogen flow. Samples are processed at atmospheric pressure or at vacuum.


The user manual, user APV, technical information and contact information can be found in LabManager:

The BCB Curing Oven. Located in the III-V Lab

BCB Curing Oven

Process information

Here are some of the standard processes used in the BCB Curing Oven.

BCB curing:

The AL/BL processes are (should be) identical except for a (2x) pump/purge cycle in the beginning of the BL processes.

General processes

There are a number of general processes named DxxxCyyy.PDF.

The Dxxx is the set temperature (in °C) and the Cyyy is the time (in minutes) at the set temperature.

The oven heats to the set temperature (xxx) in 5 mins and then stays at the temperature (xxx) for a time (yyy) after which it cools to room temperature as fast as possible.

The program sequence looks like this for the file D200C060.PDF:

;
; stored 31.08.2011  at 18:15:47
{P0}
00,05:00,0200,H - - 2 - - - - -,075,250,001,005,028
01,60:00,0200,H C 1 - - - - - -
02,05:00,0002,- C 1 - - - - - -
03,00:00,0000,- C - - - - - - -

Equipment performance and process related parameters

Equipment BCB Curing Oven
Purpose
  • BCB curing
  • Metal alloying
Process parameter range Temperature
  • 22 - 450oC
Nitrogen flows
  • Low N2 flow: 5 SLM
  • High N2 flow: Max 16.7 SLM
Pressure
  • Atmospheric pressure or vacuum
Substrates

(Remember to use the right carrier wafer)

Batch size
  • Several small samples
  • One 50 mm wafer
  • One 100 mm wafer
Allowed materials
  • BCB
  • III-V materials
  • Co-polymer
  • Silicon, silicon oxide, silicon nitride
  • Quartz
  • Resist (prebaked)
  • Metal (only Al, Ni, Ge and Au)