Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si

Test of the deposition rate and film characteristics

Recipe

	Recipe 1
Platen angle	10 degrees
Platen rotation speed	20rpm
Ar(N) flow	4 sccm
Ar(dep. source) flow	8 sccm
I(N)	320mA
Power	700W
I(B)	280mA
V(B)	1100V
Vacc(B)	400V

Results

Depostion time	10 min (before 2013)	30 min (before 2013)	30 min (before 2013)	30 min (2013-10-4)
Characterization method	FilmTek	FilmTek	Ellipsometer 3 angles	Ellipsometer 3 angles
Deposition thickness	71 nm	229 nm	242 nm	194 nm (2013-10-4)
Deposition rate	7.1 nm/min	7.6 nm/min	8.1 nm/min	6.5 nm/min
Refractive index @632nm	n=4.55 k=0.826	n=4.916 k=0.547	n=4.589 k=0.479	n=4.625 k=0.653
Refractive index @1000nm @950nm using the ellipsometer	n=? k=?	n=4.297 k=0.0836	n=4.136 k=0.189	n=4.206 k=0.183
Refractive index @1000nm @1550nm using the ellipsometer	n=? k=?	n=? k=?	n=? k=?	n=3.970 k=0.062
Roughness	6.1 nm	10.4 nm	1.1 nm	0.9 nm