Specific Process Knowledge/Characterization/KLA-Tencor Surfscan 6420

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KLA-Tencor Surfscan 6420

The image is from the cleanroom at the place it was refurbish in California.

Particles counting of a unpatterned surface. A broad range of particles size from 0.1 µm to greater than 3 µm can be measured on a polished silicon or epitaxial layers. Thin films as e.g. Poly-si, Nitride and thermal Oxide can also be inspected. The system will remove small surface roughness so it not count as a particle.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

LabManager

Overview of the performance of the Surfscan 6420 and some process related parameters

Purpose	Drive-in of boron Oxidation of silicon Oxidation of boron phase layer Annealing of the oxide	Oxidation: Dry Wet: with torch (H2+O2)
Performance	Film thickness	Dry SiO2: 50 Å to ~2000 Å (takes too long to make it thicker) Wet SiO2: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 oC
	Process pressure	1 atm
	Gasses on the system	O2, H2 and N2
Substrates	Batch size	1-25 100 mm wafers 1-25 150 mm wafers
	Substrate material allowed	Silicon wafers (new or RCA cleaned wafers) From A2 furnace directly (e.g. incl. Predep HF)