The ICP Metal Etcher
The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the IBE/IBSD Ionfab 300.
The gasses available for etching include flourine, chlorine and bromine.
Process information
An overview of the performance of the ICP Metal Etcher and some process related parameters
| Purpose
|
Dry etch of
|
- Metals such as aluminium, chromium and titanium and the related oxides and nitrides
- Metals such as molybdenum, tungsten, titanium tungsten
|
| Performance
|
Etch rates
|
- Alumninium : ~350 nm/min (depending on features size and etch load)
|
| Anisotropy
|
|
| Process parameter range
|
Process pressure
|
|
| Gas flows
|
- SF6: 0-100 sccm
- O2: 0-100 sccm
- C4F8: 0-100 sccm
- Ar: 0-100 sccm
- CF4: 0-100 sccm
- H2: 0-30 sccm
- CH4: 0-50 sccm
- BCl3: 0-100 sccm
- Cl2: 0-100 sccm
- HBr: 0-100 sccm
|
| Substrates
|
Batch size
|
- 1 6" wafer per run
- 1 4" wafer per run
- 1 2" wafer per run
- Or several smaller pieces on a carrier wafer
|
| Substrate material allowed
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- Silicon wafers
- with layers of silicon oxide or silicon (oxy)nitride
- Quartz wafers
|
| Possible masking material
|
- Photoresist/e-beam resist
- PolySilicon, Silicon oxide or silicon (oxy)nitride
- Aluminium, titanium or chromium
|
