Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace

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C4 Furnace Aluminium Anneal

C4 Furnace Aluminium Anneal: positioned in cleanroom 2

C4 Furnace Anneal is a Tempress horizontal furnace for annealing of silicon wafers with Aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that contains aluminium. Check the cross contamination chart. If you are in doubt, please send a mail to furnace@danchip.dtu.dk.

The user manual(s), technical information and contact information can be found in LabManager:

Aluminium Anneal (C4)


Process knowledge

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose Annealing Annealing of wafers containing aluminium.
Performance Film thickness
Process parameter range Process Temperature
  • 400-500 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 5 sccm
  • O2: 5 sccm
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers)
Substrate material allowed

Silicon wafers with alluminium. Wafers are allowed after alluminium lift off or after alluminium etch and resiststrip in acetone