Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si

From LabAdviser

Test of the deposition rate and film characteristics

Recipe

Recipe 1
Platen angle 10 degrees
Platen rotation speed 20rpm
Ar(N) flow 4 sccm
Ar(dep. source) flow 8 sccm
I(N) 320mA
Power 700W
I(B) 280mA
V(B) 1100V
Vacc(B) 400V


Results

Depostion time 10 min 30 min 30 min
Characterization methode FilmTek FilmTek Ellipsometer 3 angles
Deposition thickness 71 nm 229 nm 242 nm
Deposition rate 7.1 nm/min 7.6 nm/min 8.1 nm/min
Refractive index @632nm

n=4.55
k=0.826

n=4.916
k=0.547

n=4.589
k=0.479

Refractive index @1000nm

@950nm using the ellipsometer

n=?
k=?

n=4.297
k=0.0836

n=4.136
k=0.189

Roughness 6.1 nm 10.4 nm 1.1 nm