Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300

From LabAdviser

IBE/IBSD Ionfab 300: milling, dry etching and deposition in the same tool

IBE: Ion Beam Etch

IBSD: Ion Beam Sputter Deposition

This Ionfab300 from Oxford Instruments is capable of of both ion sputter etching/milling and sputter deposition. The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees).

Process information

Etch

Deposition

  • Results from the acceptance test:
    • Deposition of TiO2
    • Deposition of SiO2

A rough overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters

Purpose
  • Ar sputter etch of various materials. For example many metals and alloys.
  • Reactive Ion beam etch using F (or Cl)
  • Sputter deposition of for example high quality optical layers
Performance Etch rates

Typical 1-100 nm/min depending om material and process parameters

Anisotropy
  • Typical profiles: 70-90 degrees
Uniformity
  • Typical within +-2%
Process parameters Gas flows

Etch source:

  • Ar: 0-40 sccm
  • O: 0-100 sccm
  • CHF: 0-100 sccm
  • Cl: 0-30 sccm
  • N: 0-1000 sccm

Deposition source:

  • Ar: 0-40 sccm
  • O: 0-100 sccm
Substrates Batch size
  • One 8" wafer per run
  • One 6" wafer per run (needs carrier)
  • One 4" wafer per run (needs carrier)
  • One 2" wafer per run (needs carrier)
Materials allowed
  • Silicon, silicon oxides, silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
Possible masking material
  • Photoresist/e-beam resist
  • Ti
  • You are allowed to try with any of the materials on the list above.