Specific Process Knowledge/Thin film deposition/Deposition of MoSi
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Deposition of MoSi
Molybdenum silicide is particularly attractive for optical coatings because co-sputtering Mo with Si allows precise control of MoSi stoichiometry—and, in turn, the film’s refractive index at the design wavelength.
MoSi alloy can be deposited by DC co-sputtering in either Sputter-System Metal-Oxide(PC1) or Sputter-System Metal-Nitride (PC3)—collectively referred to as the Cluster Lesker. The process uses two 3-inch targets:
- Mo (unbonded)
- Si (indium-bonded)
Achieving the desired composition and optical properties requires careful tuning of three key parameters:
- Magnetron power on each target
- Substrate temperature
- Deposition pressure
Below is a link summarizing process results obtained with the Metal-Oxide (PC1) system: