Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2

nano1.42 versus pxnano2

Recipe nano1.42

Recipe	Gas	C4F8 75 sccm, SF6 38 sccm
	Pressure	4 mTorr, Strike 3 secs @ 15 mTorr
	Power	800 W CP, 40 W PP
	Temperature	-20 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	2017
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	211 nm zep etched down to 82 nm

• The results
• 
  The 30 nm trenches etched 120 seconds nano1.42
• 
  The 30 nm trenches etched 96 seconds pxnano2
• 
  The 60 nm trenches etched 120 seconds
• 
  The 60 nm trenches etched 96 seconds
• 
  The 90 nm trenches etched 120 seconds
• 
  The 90 nm trenches etched 96 seconds
• 
  The 120 nm trenches etched 120 seconds
• 
  The 120 nm trenches etched 96 seconds
• 
  The 150 nm trenches etched 120 seconds
• 
  The 150 nm trenches etched 96 seconds