Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2
nano1.42 versus pxnano2
Recipe | Gas | BCl3 5 sccm, HBR 15 sccm |
---|---|---|
Pressure | 2 mTorr, Strike 3 secs @ 5 mTorr | |
Power | 900 W CP, 75 W PP | |
Temperature | 50 degs | |
Hardware | 100 mm Spacers | |
Time | 60, 120 and 180 secs | |
Conditions | Run ID | 452, 453 and 454 |
Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
Mask | 190 nm zep |
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The 30 nm trenches etched 120 seconds
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The 60 nm trenches etched 120 seconds
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The 90 nm trenches etched 120 seconds
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The 120 nm trenches etched 120 seconds
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The 150 nm trenches etched 120 seconds
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The 30 nm trenches etched 96 seconds
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The 60 nm trenches etched 96 seconds
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The 90 nm trenches etched 96 seconds
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The 120 nm trenches etched 96 seconds
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The 150 nm trenches etched 96 seconds