Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch
Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | nano1.21 | nano1.4 | nano1.41 | nano1.42 | nano1.43 |
---|---|---|---|---|---|---|---|---|---|
C4F8 (sccm) | 52 | 52 | 52 | 52 | 75 | 75 | 75 | 75 | 75 |
SF6 (sccm) | 38 | 38 | 38 | 38 | 38 | 38 | 38 | 38 | 38 |
O2 (sccm) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
Coil power (W) | 800 (forward) | 600 (forward) | 800 (forward) | 600 (forward) | 800 (forward) | 800 (forward) | 800 (forward) | 800 (forward) | 800 (forward) |
Platen power (W) | 50 | 50 | 50 | 40 | 50 | 50 | 75 | 40 | 30 |
Pressure (mtorr) | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
Temperature (degs C) | 10 | 10 | -10 | -10 | -10 | -20 | -20 | -20 | -20 |
Process time (s) | 120 | 120 | 120 | 120 | 120 | 120 | 120 | 120 | 120 |
Nominal line width | Etched depths (nm) | ||||||||
30 nm | |||||||||
60 nm | |||||||||
90 nm | |||||||||
120 nm | |||||||||
150 nm | |||||||||
Nominal line width | Etch rates in trenches (nm/min) | ||||||||
30 nm | |||||||||
60 nm | |||||||||
90 nm | |||||||||
120 nm | |||||||||
150 nm | |||||||||
Etch rates in zep resist (nm/min) | |||||||||
One point on wafer | |||||||||
Images | Images | Images | Images | Images | Images | Images | Images | Images | Images |
The nanoetch
' | ER | SA | base | foot | Bowing | Curve |
nm/min | degs | nm/edge | nm/edge | |||
30 | 236 | 84,37759937 | 28 | 28 | 21 | -30 |
60 | 307 | 82,39788067 | 46 | 46 | 32 | -27 |
90 | 333 | 82,87498365 | 62 | 62 | 35 | -18 |
120 | 341 | 81,25383774 | 88 | 88 | 33 | 14 |
150 | 339 | 80,29807321 | 103 | 103 | 36 | 16 |
Avg | 311 | 82 | 65 | 65 | 31 | -9 |
Std | 44 | 2 | 30 | 30 | 6 | 22 |
zep | 0 | |||||